2SB1144 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – 100V/1.5A Switching Applications

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1144
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -10uA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -500mA; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
COB
Output Capacitance
IE=0; VCB= -10V, ftest= 1MHz
MIN TYP. MAX UNIT
-100
V
-120
V
-6
V
-0.3 V
-1.2 V
-0.1 μA
-0.1 μA
100
400
30
120
MHz
11
pF
 hFE -1Classifications
Q
S
T
100-200 140-280 200-400
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