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| 2SA755 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,RBE=â
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-20V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-4V
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
 hFE-1 Classifications
A
B
C
35-70 60-120 100-200
Product Specification
2SA755
MIN TYP. MAX UNIT
-50
V
-50
V
-4
V
-1.3
V
-1.5
V
-100 μA
35
200
35
50
MHz
2
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