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2SA753 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE DIFFUSED
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-30V; IE=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-10A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
‹ hFE-1 Classifications
A
B
C
30-60 50-120 100-200
Product Specification
2SA753
MIN TYP. MAX UNIT
-110
V
-140
V
-5
V
-1.5
V
-1.5
V
-1
mA
30
200
15
20
MHz
2