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| 2SA738 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE
Base-emitter voltage
IC=-500mA ; VCE=-2V
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=-25V; IE=0
VEB=-5V; IC=0
IC=-150mA ; VCE=-2V
hFE-2
DC current gain
IC=-500mA ; VCE=-2V
fT
Transition frequency
IC=-50mA; VCE=-5V
Product Specification
2SA738
MIN TYP. MAX UNIT
-25
V
-0.5
V
-1.0
V
-1.0 μA
-1.0 μA
35
320
25
160
MHz
2
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