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| 2SA699 Datasheet, PDF (2/5 Pages) Panasonic Semiconductor – SI PNP EPITAXIAL PLANAR | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A
VBEsat Base-emitter saturation voltage
IC=-2A ;IB=B -0.2 A
V(BR)CBO
Collector-base
breakdown voltage
2SA699
2SA699A
IC=-1mA;IE=0
V(BR)CEO
Collector-emitter
breakdown voltage
2SA699
2SA699A
IC=-10mA; IB=0
ICBO
Collector cut-off current
VCB=-20V; IE=0
ICEO
Collector cut-off current
VCE=-12V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0; VCB=-5V;f=1MHz
fT
Transition frequency
IE=0.5A ; VCB=-5V
 hFE classifications
P
Q
R
50-100 80-160 100-220
Product Specification
2SA699 2SA699A
MIN TYP. MAX UNIT
-0.4 -1.0
V
-1.5
V
-40
V
-50
-32
V
-40
-1
μA
-100 μA
-100 μA
50
220
70
pF
150
MHz
2
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