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| 2SA648 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-5V
Product Specification
2SA648
MIN TYP. MAX UNIT
-120
V
-120
V
-6
V
-2.0
V
-2.5
V
-0.1 mA
-0.1 mA
30
120
10
MHz
2
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