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| 2SA489 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO
Collector cut-off current
VCB=-70V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
 hFE Classifications
R
O
Y
40-80 70-140 120-240
Product Specification
2SA489
MIN TYP. MAX UNIT
-60
V
-70
V
-5
V
-1.0
V
-1.5
V
-10 μA
-10 μA
40
240
3
MHz
2
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