2SA1988 Datasheet, PDF (2/4 Pages) NEC – PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEsat Collector-emitter saturation voltage I_C=-5A; I_B=-0.5A
V_BEsat Base-emitter saturation voltage
I_C=-5A; I_B=-0.5A
I_CBO
Collector cut-off current
V_CB=-200V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-3V; I_C=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-5V
h_FE-2
DC current gain
I_C=-3.5A ; V_CE=-5V
C_OB
Output capacitance
I_E=0 ; V_CB=-10V,f=1MHz
f_T
Transition frequency
I_C=-1A ; V_CE=-5V
Product Specification
2SA1988
MIN TYP. MAX UNIT
-0.6
-2.0
V
-1.3
-2.0
V
-50
A
-50
A
70
200
20
270
pF
40
MHz
2