2SA1634 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-1mA ,I_B=B 0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-0.1mA ,I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-2A; I_B=-0.2A
V_{BE sat} Base-emitter saturation voltage
I_C=-2A; I_B=-0.2A
I_CBO
Collector cut-off current
V_CB=-80V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
I_C=-1A ; V_CE=-4V
C_OB
Output capacitance
I_E=0 ; V_CB=-10V;f=1MHz
f_T
Transition frequency
I_C=-0.5A ; V_CE=-12V
‹ h_FE Classifications
D
E
60-120
100-200
F
160-320
Product Specification
2SA1634
MIN TYP. MAX UNIT
-80
V
-5
V
-1.5
V
-1.5
V
-10
μA
-10
μA
60
320
80
pF
12
MHz
2