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| 2SA1147 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Product Specification
2SA1147
MIN TYP. MAX UNIT
-180
V
-180
V
-5
V
-3.0
V
-0.1
mA
-0.1
mA
30
60
MHz
2
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