English
Language : 

2SA1095 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – 2SA1095
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-100mA; IB=B 0
V(BR)EBO Emitter-base breakdown voltage
IE=-10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=B -0.5 A
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-160V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-5A ; VCE=-5V
fT
Transition frequency
IC=-1A ; VCE=-10V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
‹ hFE classifications
R
O
Y
55-110 80-160 120-240
Product Specification
2SA1095
MIN TYP. MAX UNIT
-160
V
-5
V
-2.0
V
-2.0
V
-50 μA
-50 μA
55
240
40
60
MHz
350
pF
2