2N6338 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(25A,200W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N6338/6339/6340/6341
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6338
CONDITIONS
MIN MAX UNIT
100
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
2N6339
2N6340
IC= 50mA ; IB= 0
120
V
140
2N6341
150
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 25A; IB= 2.5A
VBE_(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE_(sat)-2 Base-Emitter Saturation Voltage
IC= 25A; IB= 2.5A
VBE(_on) Base-Emitter On Voltage
IC= 10A ; VCE= 2V
2N6338 VCE= 50V; IB= 0
1.0
V
1.8
V
1.8
V
2.5
V
1.8
V
50
ICEO
Collector
Cutoff Current
2N6339
2N6340
VCE= 60V; IB= 0
VCE= 70V; IB= 0
50
μA
50
2N6341 VCE= 75V; IB= 0
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= RatedVCBO; IE= 0
VCE= RatedVCEO;VBE(_off)= 1.5V
VCE= RatedVCEO;VBE(_off)= 1.5V,TC=150℃
VEB= 6V; IC=0
50
10 μA
10 μA
1.0 mA
0.1 mA
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
50
hFE-2
DC Current Gain
IC= 10A ; VCE= 2V
30 120
hFE-3
DC Current Gain
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
Switching Times
IC= 25A ; VCE= 2V
IC= 1A ; VCE= 10V ;f_test= 10MHz
IE= 0 ; VCB= 10V ;f_test= 0.1MHz
12
40
MHz
300 pF
t_r
Rise Time
t_stg
Storage Time
t_f
Fall Time
VCC= 80V; IC= 10A;IB1= 1A, VBE(_off)= 6V
VCC= 80V; IC= 10A; IB1= -IB2= 1A,
0.3 μs
1.0 μs
0.25 μs
isc Website：www.iscsemi.cn
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