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| 2N6291 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6291
2N6293
IC=0.1A ;IB=0
VCEsat-1
Collector-emitter
saturation voltage
2N6291 IC=2.5A;IB=0.25A
2N6293 IC=2A;IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=3A
VBE-1
Base-emitter
on voltage
2N6291 IC=2.5A ; VCE=4V
2N6293 IC=2A ; VCE=4V
VBE-2
Base-emitter on voltage
IC=7A ; VCE=4V
ICEO
Collector
cut-off current
2N6291 VCE=40V; IB=0
2N6293 VCE=60V; IB=0
ICEX
Collector
cut-off current
2N6291
2N6293
VCE=56V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=150
VCE=75V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=150
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
2N6291 IC=2.5A ; VCE=4V
2N6293 IC=2A ; VCE=4V
hFE-2
DC current gain
IC=7A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=4V;f=1MHz
Product Specification
2N6291 2N6293
MIN TYP. MAX UNIT
50
V
70
1.0
V
3.5
V
1.5
V
3.0
V
1.0 mA
0.1
2.0
mA
0.1
2.0
1.0 mA
30
150
2.3
250 pF
10
MHz
2
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