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| 2N6288 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6288 2N6290 2N6292
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6288
2N6290 IC=0.1A ;IB=0
2N6292
VCEsat-1
Collector-emitter
saturation voltage
2N6288 IC=3A;IB=0.3A
2N6290 IC=2.5A;IB=0.25A
2N6292 IC=2A;IB=0.2A
VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=3A
VBE-1
2N6288 IC=3A ; VCE=4V
Base-emitter on voltage 2N6290 IC=2.5A ; VCE=4V
VBE-2
ICEO
2N6292 IC=2A ; VCE=4V
Base-emitter on voltage
IC=7A ; VCE=4V
2N6288 VCE=20V; IB=0
Collector cut-off current 2N6290 VCE=40V; IB=0
2N6292 VCE=60V; IB=0
2N6288
VCE=40V; VBE=-1.5V
VCE=30V; BE=-1.5V,TC=125
ICEX
Collector cut-off current
2N6290
VCE=60V; VBE=-1.5V
VCE=50V; BE=-1.5V,TC=125
2N6292
VCE=80V; VBE=-1.5V
VCE=70V; BE=-1.5V,TC=125
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
2N6288 IC=3A ; VCE=4V
2N6290 IC=2.5A ; VCE=4V
2N6292 IC=2A ; VCE=4V
hFE-2
fT
DC current gain
Transition frequency
IC=7A ; VCE=4V
IC=0.5A ; VCE=4V;f=1MHz
MIN TYP. MAX UNIT
30
50
V
70
1.0
V
3.5
V
1.5
V
3.0
V
1.0 mA
0.1
2.0
0.1
2.0
mA
0.1
2.0
1.0 mA
30
150
2.3
2.5
MHz
2
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