 English |
|
|
|
|
|
|
|
| 2N6274 Datasheet, PDF (2/2 Pages) ON Semiconductor – POWER TRANSISTORS NPN SILICON | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N6274
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 20A; IB= 2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 50A; IB= 10A
VBE(on) Base-Emitter On Voltage
IC= 20A; VCE= 4V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 50V; IB=B 0
VCE= 120V; VBE(off)=1.5V
VCE= 120V; VBE(off)=1.5V; TC=150â
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 20A; VCE= 4V
hFE-3
DC Current Gain
IC= 50A; VCE= 4V
fT
Current-GainâBandwidth Product IC= 1A; VCE= 10V
COB
Output Capacitance
Switching times
IE= 0; VCB= 10V; ftest= 0.1MHz
tr
Rise Time
ts
Storage Time
tf
Fall Time
VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V
VCC= 80V, IC= 20A, IB1= -IB2= 2A
MIN MAX UNIT
100
V
1.0
V
3.0
V
1.8
V
3.5
V
1.8
V
50 μA
10 μA
1.0 mA
0.1 mA
50
30 120
10
30
MHz
600 pF
0.35 μs
0.80 μs
0.25 μs
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese