2N6121 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6121 2N6122 2N6123
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N6121
2N6122 IC=0.1A ;IB=0
2N6123
V_CEsat-1 Collector-emitter saturation voltage I_C=1.5A;I_B=0.15A
V_CEsat-2 Collector-emitter saturation voltage I_C=4.0A;I_B=1.0A
V_BE
Base-emitter on voltage
I_C=1.5A ; V_CE=2V
2N6121
V_CE=45V;V_BE=1.5V
T_C=125
I_CEX
Collector cut-off current
2N6122
V_CE=60V;V_BE=1.5V
T_C=125
2N6123
V_CE=80V;V_BE=1.5V
T_C=125
2N6121 V_CE=45V;I_B=0
I_CEO
Collector cut-off current 2N6122 V_CE=60V;I_B=0
2N6123 V_CE=80V;I_B=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
2N6121
h_FE-1
DC current gain
2N6122 IC=1.5A ; VCE=2V
2N6123
2N6121
h_FE-2
DC current gain
2N6122 IC=4A ; VCE=2V
2N6123
f_T
Transition frequency
I_C=1A ; V_CE=4V
MIN TYP. MAX UNIT
45
60
V
80
0.6
V
1.4
V
1.2
V
0.1
2.0
0.1
2.0
mA
0.1
2.0
1.0 mA
1.0 mA
25
100
20
80
10
7
2.5
MHz
2