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| 2N6098 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6098 2N6099 2N6100 2N6101
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6098
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6099
2N6100
IC=0.1A ;IB=0
2N6101
VCEsat-1 Collector-emitter saturation voltage
IC=5A;IB=0.5A
VCEsat-2 Collector-emitter saturation voltage
IC=10A;IB=2.5A
2N6098/6099 IC=4A ; VCE=4V
VBE
Base-emitter on voltage
2N6100/6101 IC=5A ; VCE=4V
ICBO
Collector cut-off current
VCB=Rated VCBO;IE=0
TC=150
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
fT
Transition frequency
2N6098/6099 IC=4A ; VCE=4V
2N6100/6101 IC=5A ; VCE=4V
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
70
70
V
80
80
1.3
V
3.5
V
1.3
V
0.5
2.0
mA
1.0 mA
20
80
0.8
MHz
2
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