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| 2N5989 Datasheet, PDF (2/3 Pages) Motorola, Inc – 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5989 2N5990 2N5991
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5989
2N5990 IC=0.2A ;IB=0
2N5991
VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6A
VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.8A
VBEsat Base-emitter saturation voltage
IC=12A; IB=1.8A
VBE
Base-emitter on voltage
IC=6A ; VCE=2V
2N5989 VCE=20V; IB=0
ICEO
Collector cut-off current 2N5990 VCE=30V; IB=0
2N5991 VCE=40V; IB=0
ICEX
Collector cut-off current
VCE=RatedVCE;VBE=-1.5V
TC=125
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.5A ; VCE=2V
hFE-2
DC current gain
IC=6A ; VCE=2V
hFE-3
DC current gain
IC=12A ; VCE=2V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
MIN TYP. MAX UNIT
40
60
V
80
0.6
V
1.7
V
2.5
V
1.4
V
2.0
mA
0.2
2.0
mA
1.0
mA
40
20
120
7.0
300
pF
2.0
MHz
2
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