2N5937 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5937
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 1.3A
VBE(on) Base-Emitter On Voltage
IC= 30A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 160V; IB= 0
ICBO
Collector Cutoff Current
VCB= 170V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 30A ; VCE= 4V
fT
Current-Gain—Bandwidth Product I_C= 1A ; V_CE= 10V ;f_test= 1MHz
MIN TYP. MAX UNIT
160
V
2.0
V
3.5
V
2.0 mA
1.0 mA
1.0 mA
20
100
30
MHz
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