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2N5929 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N5929
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 7.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 30A; IB= 7.5A
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 80V; IB= 0
ICBO
Collector Cutoff Current
VCB= 90V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 10A ; VCE= 4V
hFE-2
DC Current Gain
IC= 30A ; VCE= 4V
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 1MHz
MIN TYP. MAX UNIT
80
V
1.0
V
4.0
V
2.5
V
1.5
V
2.0 mA
1.0 mA
1.0 mA
20
100
4
30
MHz
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