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| 2N5883 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W) | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5883 2N5884
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
2N5883
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=-0.2A ;IB=0
V
2N5884
-80
VCEsat-1 Collector-emitter saturation voltage IC=-15A; IB=-1.5A
-1
V
VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-6.25A
-4
V
VBEsat Base-emitter saturation voltage
IC=-25A ;IB=-6.25A
-2.5
V
VBE
Base-emitter on voltage
IC=-10A ; VCE=-4V
-1.5
V
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
-1
mA
2N5883 VCE=-30V; IB=0
ICEO
Collector cut-off current
2N5884 VCE=-40V; IB=0
-2
mA
ICEV
Collector cut-off current
(VBE(off)=1.5V)
VCE=ratedVCEO;
VCE=ratedVCEO; TC=150
-1
mA
-10
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
IC=-3A ; VCE=-V
35
hFE-2
DC current gain
IC=-10A ; VCE=-4V
20
100
hFE-3
DC current gain
IC=-25A ; VCE=-4V
4
fT
Trainsistion frequency
IC=-1A ; VCE=-10V;f=1MHz
4
MHz
Ccb
Collector base capacitance
IE=0; VCB=-10V;f=1MHz
500
pF
Switching times
tr
Rise time
ts
Storage time
tf
Fall time
IC=-10A ;IB1=- IB2=-1A
VCC=-30V
0.7
s
1.0
s
0.8
s
2
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