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| 2N5871 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5871 2N5872
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5871
2N5872
IC=-0.1A ;IB=0
VCEsat Collector-emitter saturation voltage
IC=-5A;IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=ratedVCBO; IB=0
ICEO
Collector cut-off current
2N5871 VCE=-30V; IB=0
2N5872 VCE=-40V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-2.5A ; VCE=-4V
fT
Trainsistion frequency
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-60
V
-80
-1.0
V
-1.5
V
-1.0 mA
-2.0 mA
-1.0 mA
20
100
4
MHz
2
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