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| 2N5671 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,140W) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5671 2N5672
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5671
2N5672
IC=0.2A ;IB=0
VCEsat Collector-emitter saturation voltage IC=15A; IB=1.2A
VBEsat
VBE
ICEO
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
IC=15A ;IB=1.2A
IC=15A ; VCE=5V
VCE=80V; IB=0
2N5671 VCE=110V; VBE(off)=1.5V
ICEV
Collector
cut-off current
2N5672 VCE=135V; VBE(off)=1.5V
2N5671
2N5672
VCE=100V;VBE(off)=1.5V;
TC=150
IEBO
hFE-1
Emitter cut-off current
DC current gain
VEB=7V; IC=0
IC=15A ; VCE=2V
hFE-2
DC current gain
IC=20A ; VCE=5V
fT
Trainsistion frequency
IC=2A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=15A ;IB1=- IB2=1.2A
VCC=30V;tp=0.1ms
MIN TYP. MAX UNIT
90
V
120
0.75
V
1.5
V
1.6
V
10
mA
12
10
mA
15
10
10
mA
20
100
20
40
MHz
0.5
s
1.5
s
0.5
s
2
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