2N5605 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N5605
2N5607/5609 IC=50mA ;IB=0
2N5611
V_CEsat Collector-emitter saturation voltage I_C=-1A; I_B=-0.1A
V_BE
Base-emitter on voltage
I_C=-2.5A ; V_CE=-5V
I_CBO
Collector cut-off current
V_CB=Rated V_CBO; I_E=0
I_CEO
Collector cut-off current
V_CE= Rated V_CEO,I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
2N5605/5609
2N5607/5611
I_C=-2.5A ; V_CE=-5V
2N5605/5609
f_T
Transition frequency
I_C=-0.5A ; V_CE=-10V
2N5607/5611
MIN TYP. MAX UNIT
-60
-80
V
-100
-0.5
V
-1.5
V
-0.1 mA
-1.0 mA
-0.1 mA
70
200
30
90
70
MHz
60
2