2N5597 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N5597 2N5599 2N5601 2N5603
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS)
Collector-emitter
sustaining voltage
2N5597
2N5599/5601 IC=-50mA ;IB=0
2N5603
V_CEsat Collector-emitter saturation voltage I_C=-1A; I_B=-0.1A
V_BE
Base-emitter on voltage
I_C=-1A ; V_CE=-5V
I_CBO
Collector cut-off current
V_CB=Rated V_CBO; I_E=0
I_CEO
Collector cut-off current
V_CE= Rated V_CEO,I_B=0
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
h_FE
DC current gain
2N5597/5601
2N5599/5603
I_C=-1A ; V_CE=-5V
2N5597/5601
f_T
Transition frequency
I_C=-0.5A ; V_CE=-10V
2N5599/5603
MIN TYP. MAX UNIT
-60
-80
V
-100
-1.0
V
-1.5
V
-0.1 mA
-1.0 mA
-0.1 mA
70
200
30
90
60
MHz
50
2