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| 2N5498 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCER
Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ohm
VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=15A ;IB=3A
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=130V; IB=0
VCE=130V; VBE(off)=1.5V
TC=150
VEB=7V; IC=0
hFE
DC current gain
IC=15A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
Product Specification
2N5498
MIN TYP. MAX UNIT
130
V
150
V
1.4
V
4.0
V
2.0
mA
2.0
10.0
mA
1.0
mA
10
50
1
MHz
2
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