2N5427 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(7A,40W)

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5427
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE_(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VCE_(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A
VBE_(sat)-1 Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
VBE_(sat)-2 Base-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
ICBO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= 80V; IE= 0
VCE= 75V; VBE(off)= -1.5V
VCE= 75V; VBE(off)= -1.5V,TC=150℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 2V
hFE-2
DC Current Gain
IC= 2A; VCE= 2V
hFE-3
DC Current Gain
IC= 5A; VCE= 2V
fT
Current Gain-Bandwidth Product
IC= 0.5A; VCE= 10V; f=10MHz
MIN MAX UNIT
80
V
0.7
V
1.2
V
1.2
V
2.0
V
0.1
mA
0.1
1.0
mA
0.1
mA
30
30
120
20
20
MHz
isc Website：www.iscsemi.cn
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