 English |
|
|
|
|
|
|
|
| 2N5241 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A; IB=0.4A
VCB=400V; IE=0
TC=125
VCE=400V; IB=0
VEB=5V; IC=0
hFE
DC current gain
IC=2.5A ; VCE=5V
Product Specification
2N5241
MIN TYP. MAX UNIT
400
V
2.0
V
2.0
V
0.2
2.0
mA
5.0
mA
1.0
mA
15
35
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese