2N5157 Datasheet, PDF (2/3 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO(SUS) Collector-emitter sustaining voltage I_C=0.1A ; I_B=0
V_CEsat Collector-emitter saturation voltage I_C=3A; I_B=0.5A
V_BEsat Base-emitter saturation voltage
I_CBO
Collector cut-off current
I_CEO
Collector cut-off current
I_C=3A; I_B=0.5A
V_CB=700V; I_E=0
T_C=125
V_CE=500V; I_B=0
I_EBO
Emitter cut-off current
V_EB=7V; I_C=0
h_FE
DC current gain
I_C=1A ; V_CE=5V
f_T
Transition frequency
I_C=1A ; V_CE=10V;f=5.0MHz
Product Specification
2N5157
MIN TYP. MAX UNIT
500
V
1.2
V
1.5
V
0.2
2.0
mA
5.0
mA
1.0
mA
30
90
2.8
MHz
2