2N4910 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N4910
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0
40
V
VCE_(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
VBE_(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 1A ; VCE= 1V
VCE= 40V;VBE(_off)= 1.5V
VCE= 40V;VBE(_off)= 1.5V;TC=150℃
VCE= 20V; IB= 0
0.6 V
1.3 V
1.3 V
0.1
1.0
mA
0.5 mA
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 50mA ; VCE= 1V
40
hFE-2
DC Current Gain
IC= 500mA ; VCE= 1V
20
100
hFE-3
DC Current Gain
IC= 1A ; VCE= 1V
10
fT
Current-Gain—Bandwidth Product
IC= 0.25A; VCE= 10V, f_test= 1MHz
3
COB
Output Capacitance
IE= 0; VCB= 10V; f_test= 100kHz
MHz
100 pF
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