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| 2N4898 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(1A, 25W) | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N4898 2N4899 2N4900
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N4898
2N4899 IC=-0.1A ;IB=0
2N4900
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-1V
2N4898 VCE=-20V; IB=0
ICEO
Collector cut-off current 2N4899 VCE=-30V; IB=0
2N4900 VCE=-40V; IB=0
ICEX
Collector cut-off current
VCE=Rated VCEO; VBE(off)=1.5V
TC=150
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
DC current gain
DC current gain
DC current gain
VEB=-5V; IC=0
IC=-50mA ; VCE=-1V
IC=-500mA ; VCE=-1V
IC=-1.0A ; VCE=-1V
COB
Output capacitance
IE=0;VCB=-10V;f=1MHz
fT
Transition frequency
IC=-250mA;VCE=-10V
MIN TYP. MAX UNIT
-40
-60
V
-80
-0.6
V
-1.3
V
-1.3
V
-0.5 mA
-0.1
-1.0
mA
-0.1 mA
-1.0 mA
40
20
100
10
100 pF
3.0
MHz
2
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