2N4388 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

isc Silicon PNP Power Transistors
INCHANGE Semiconductor
2N4388
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -40V; IB=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE
DC Current Gain
IC= -0.5A ; VCE= -3V
MIN MAX UNIT
-0.75 V
-1.8
V
-0.1 mA
-0.1 mA
25 100
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