2N4348 Datasheet, PDF (2/2 Pages) New Jersey Semi-Conductor Products, Inc. – Hometaxial-Base, High-Current Silicon N-P-N Transistors

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4348
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICEO
Collector Cutoff Current
VCE=100V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 5A; IB= 500mA
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 10A; IB= 1.25mA
VBE(ON)-1* Base-Emitter On Voltage
IC=5A;VCE= 4V
VBE(ON)-2* Base-Emitter On Voltage
IC=10A;VCE= 4V
hFE-1*
DC Current Gain
IC=5A; VCE= 4V
hFE-2*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 10A; VCE= 4V
MIN MAX UNIT
120
V
200 mA
5
mA
1.0
V
2.0
V
2.0
V
3.0
V
15
60
10
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