2N4298 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4298
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0
ICBO
Collector Cutoff Current
VCE=500V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
VCE(sat)* Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
VBE(sat)* Base-Emitter Saturation Voltage
IC=50mA; IB= 5mA
VBE(ON)* Base-Emitter On Voltage
IC=0.1A;VCE= 10V
hFE-1*
DC Current Gain
IC= 5mA; VCE= 10V
hFE-2*
DC Current Gain
IC= 50mA; VCE= 10V
hFE-3*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 0.1A; VCE= 10V
MIN MAX UNIT
350
V
0.1 mA
0.1 mA
0.9
V
1.5
V
0.9
V
20
25
75
20
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