2N4273 Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4273
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=200mA; IB= 0
ICEO
Collector Cutoff Current
VCE=140V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 1A; VCE= 10V
MIN MAX UNIT
140
V
0.5 mA
0.5 mA
20 140
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