2N4233A Datasheet, PDF (2/2 Pages) Seme LAB – Bipolar NPN Device in a Hermetically sealed TO66

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2N4233A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA; IB= 0
ICEO
Collector Cutoff Current
VCE=80V;IB= 0
ICEX
Collector-Emitter Leakage current
VCE=80V,VBE(OFF)=1.5V
ICBO
Collector Cutoff Current
VCE=80V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
VCE(sat)-1* Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VCE(sat)-2* Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-3* Collector-Emitter Saturation Voltage IC= 5A; IB=1.25A
VBE(ON)* Base-Emitter On Voltage
IC=1.5A;VCE= 2V
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2*
DC Current Gain
IC= 1.5A; VCE= 2V
hFE-3*
DC Current Gain
IC= 3A; VCE= 2V
hFE-4*
DC Current Gain
*:Pulse test:Pulse width=300us,duty cycle≤2%
IC= 5A; VCE= 4V
MIN MAX UNIT
60
V
1
mA
0.1 mA
50
uA
0.5 mA
0.7
V
2.0
V
4
V
1.4
V
40
25 100
10
4
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