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| 2N3183 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistors | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter sustaining voltage IC=-0.2A ;IB=0
VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-1A
VBE(on) Base-emitter on voltage
IC=-5A ; VCE=-4V
ICEO
Collector cut-off current
VCE=Rated VCEO; IB=0
ICBO
Collector cut-off current
VCB=Rated VCBO; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.3A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
Product Specification
2N3183
MIN TYP. MAX UNIT
-40
V
-1.5
V
-2.0
V
-5.0 mA
-0.1 mA
-1.0 mA
30
15
2
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