TTA1943 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Amplifier Applications

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
TTA1943
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -230V(Min)
·Complement to Type TTC5200
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Power amplifier applications
·Recommended for 100W high fidelity audio frequency amplifier
output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1.5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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