TIP61E Datasheet, PDF (1/2 Pages) –

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
TIP61E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 140V(Min)
·Wide Area of Safe Operation
·Complement to Type TIP62E
APPLICATIONS
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
140
V
VCEO Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.5
A
1.5
W
40
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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