TIP562 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP562/563
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 300V(Min)- TIP562
= 400V(Min)- TIP563
·High Power Dissipation
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators, and a variety of power switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
TIP562
300
V_CBO Collector-Base Voltage
V
TIP563
400
TIP562
300
V_CEO(SUS) Collector-Emitter Voltage
V
TIP563
400
V_EBO Emitter-Base Voltage
8
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current-Continuous
Collector Power Dissipation
P_C
@T_C=100℃
T_J
Junction Temperature
T_stg
Storage Temperature
2
A
100
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
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