TIP53 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP53
DESCRIPTION
·DC Current Gain -h_FE = 30~150@ I_C= 0.3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 350V(Min)
APPLICATIONS
·Designed for line operated audio output amplifier,and switching
power supply drivers applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
450
V
V_CEO Collector-Emitter Voltage
350
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
3.0
A
I_CM
Collector Current-Peak
5.0
A
I_BB
Base Current
Collector Power Dissipation
P_D
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
0.6
A
100
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX UNIT
1.25 ℃/W
isc Website：www.iscsemi.cn