TIP513 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
TIP513
DESCRIPTION
·Continuous Collector Current-IC= -5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Collector Power Dissipation-
: PC= 30W @TC≤ 100℃
APPLICATIONS
·Designed for power amplifier and high speed switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-7.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta= 25℃
PC
Collector Power Dissipation
@TC≤100℃
TJ
Junction Temperature
-2
A
2
W
30
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
3.33 ℃/W
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