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| TIP50 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP50
DESCRIPTION
·DC Current Gain -hFE = 30~150@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
·Designed for line operated audio output amplifier,switchmode
power supply drivers and other switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.0
A
ICM
Collector Current-Peak
2.0
A
IBB
Base Current
Collector Power Dissipation
TC=25â
PD
Collector Power Dissipation
Ta=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.6
A
40
W
2
150
â
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX UNIT
3.125 â/W
62.5 â/W
isc Websiteï¼www.iscsemi.cn
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