TIP42E Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
TIP42E
DESCRIPTION
·DC Current Gain -h_FE = 30(Min)@ I_C= -0.3A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -140V(Min)
·Complement to Type TIP41E
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-180
V
V_CEO
Collector-Emitter Voltage
-140
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-6
A
I_CM
Collector Current-Peak
-10
A
I_BB
Base Current
Collector Power Dissipation
T_C=25℃
P_C
Collector Power Dissipation
T_a=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-3
A
65
W
2
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
1.92 ℃/W
Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc Website：www.iscsemi.cn