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TIP42D Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
TIP42D
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= -0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -120V(Min)
·Complement to Type TIP41D
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
Collector Power Dissipation
TC=25â
PC
Collector Power Dissipation
Ta=25â
Tj
Junction Temperature
-3
A
65
W
2
150
â
Tstg
Storage Temperature Range
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 â/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 â/W
isc websiteï¼ www.iscsemi.com
1 isc & iscsemi is registered trademark
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