TIP41C Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

isc Silicon NPN Power Transistors
INCHANGE Semiconductor
TIP41C
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Complement to Type TIP42C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
2
A
65
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 57 ℃/W
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