TIP29A Datasheet, PDF (1/2 Pages) STMicroelectronics – NPN power transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
TIP29A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 60V(Min)
·Collector-Emitter Saturation Voltage-
: V_CE(sat) = 0.7V(Max.)@I_C= 1.0A
·Complement to Type TIP30A
APPLICATIONS
·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
60
V
V_CEO Collector-Emitter Voltage
60
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
1
A
I_CM
Collector Current-Pulse
3
A
I_B
Base Current
Collector Power Dissipation
P_C
T_C=25℃
T_j
Junction Temperature
T_stg
Storage Ttemperature Range
0.4
A
30
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
4.17 ℃/W
62.5 ℃/W
isc Website：www.iscsemi.cn