TIP2955T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
TIP2955T
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC = 4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC = 4A
·Complement to Type TIP2955T
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-70
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IC
Collector Current-Peak
-12
A
IB
Base Current
-4
A
PC
Collector Power Dissipation@TC=25℃
75
W
Tj
Junction Tmperature
Tstg
Storage Temperature Range
150
℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70
℃/W
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