TIP142 Datasheet, PDF (1/3 Pages) STMicroelectronics – Complementary power Darlington transistors

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
TIP142
DESCRIPTION
·High DC Current Gain-
: h_FE = 1000(Min)@ I_C= 5A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 100V(Min)
·Complement to Type TIP147
APPLICATIONS
·Designed for general purpose amplifier and low
frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
100
V
V_CEO Collector-Emitter Voltage
100
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
10
A
I_CM
Collector Current-Peak
15
A
I_BB
Base Current- Continuous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
0.5
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
R_{th j-a}
Thermal Resistance, Junction to Case
1.0 ℃/W
Thermal Resistance,Junction to Ambient 35.7 ℃/W
isc Website：www.iscsemi.cn