TIP120 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5.0A,60-100V,65W)

Inchange Semiconductor
Silicon NPN Darlington Power Transistors
Product Specification
TIP120/121/122
DESCRIPTION
With TO-220C package
DARLINGTON
High DC current gain
Low collector saturation voltage
Complement to type TIP125/126/127
APPLICATIONS
Designed for general–purpose amplifier
and low–speed switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
TIP120
V_CBO
Collector-base voltage TIP121
TIP122
TIP120
V_CEO
Collector-emitter voltage TIP121
TIP122
V_EBO
Emitter-base voltage
I_C
Collector current-DC
I_CM
Collector current-Pulse
I_B
Base current-DC
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_a=25
VALUE
60
80
100
60
80
100
5
5
8
120
65
2
150
-65~150
UNIT
V
V
V
A
A
mA
W